DMTH4M90SPSW Series

40V +175°C N-Channel Enhancement Mode MOSFET

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package
Diodes Inc DMTH4M90SPSW-13	0.9 mOhm	115 nC	Surface Mount Wettable Flank	8-PowerTDFN	10 V	4 V	20 V	N-Channel	40 V	-55 °C	175 ░C	9434 pF	278 A	MOSFET (Metal Oxide)	PowerDI5060-8 (Type UX)

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Wettable Flank for Improved Optical Inspection

• Low RDS(ON)– Minimizes On-State Losses

• < 1.1mm Package Profile – Ideal for Thin Applications

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An automotive-compliant part is available under separate datasheet (DMTH4M90SPSWQ)

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.