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DMTH61M5SPSW-13

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Diodes Inc

TRANSISTOR MOSFET N-CH 60V 225A 8-PIN POWERDI 5060 T/R

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DMTH61M5SPSW-13

Active
Diodes Inc

TRANSISTOR MOSFET N-CH 60V 225A 8-PIN POWERDI 5060 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH61M5SPSW-13
Current - Continuous Drain (Id) @ 25°C225 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs130.6 nC
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)3.2 W, 167 W
Rds On (Max) @ Id, Vgs1.5 mOhm
Supplier Device PackagePowerDI5060-8 (SWP)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.93
10$ 1.60
100$ 1.27
500$ 1.08
1000$ 0.91
Digi-Reel® 1$ 1.93
10$ 1.60
100$ 1.27
500$ 1.08
1000$ 0.91
Tape & Reel (TR) 2500$ 0.83

Description

General part information

DMTH61M5SPSW Series

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.