DMTH61M5SPSW Series

60V +175°C N-Channel Enhancement Mode MOSFET

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Diodes Inc DMTH61M5SPSW-13	N-Channel	-55 °C	175 ░C	130.6 nC	225 A	20 V	MOSFET (Metal Oxide)	8-PowerTDFN	4 V	Surface Mount	PowerDI5060-8 (SWP)	3.2 W 167 W	10 V	1.5 mOhm	60 V

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient TemperatureEnvironments

• 100% Unclamped Inductive Switching (UIS) Test in Production –

• Ensures More Reliable and Robust End Application

• High-Conversion Efficiency

• Low RDS(ON) – Minimizes On State Losses

• Low Input Capacitance

• Fast Switching Speed

• Wettable Flank for Improved Optical Inspection

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.