IPZ60R037P7XKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 76A TO247-4

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 76A TO247-4

Technical Specifications

Parameters and characteristics for this part

Specification	IPZ60R037P7XKSA1

Current - Continuous Drain (Id) @ 25°C	76 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	121 nC
Input Capacitance (Ciss) (Max) @ Vds	5243 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	255 W
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	PG-TO247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPZ60R125P6FKSA1	Through Hole	N-Channel	3330 pF	TO-247-4	-55 °C	150 °C	PG-TO247-4	600 V	70 nC	10 V	4.5 V	99 mOhm	219 W	20 V	MOSFET (Metal Oxide)	37.9 A
Infineon Technologies IPZ60R037P7XKSA1	Through Hole	N-Channel	5243 pF	TO-247-4	-55 °C	150 °C	PG-TO247-4	650 V		10 V	4 V	37 mOhm	255 W	20 V	MOSFET (Metal Oxide)	76 A	121 nC
Infineon Technologies IPZ60R041P6FKSA1	Through Hole	N-Channel	8180 pF	TO-247-4	-55 °C	150 °C	PG-TO247-4	600 V		10 V	4.5 V	41 mOhm	481 W	20 V	MOSFET (Metal Oxide)	77.5 A	170 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 76A (Tc) 255W (Tc) Through Hole PG-TO247-4

Technical documentation and resources

No documents available