IPZ60R Series

Catalog

MOSFET N-CH 600V 37.9A TO247-4

Part	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPZ60R125P6FKSA1	Through Hole	N-Channel	3330 pF	TO-247-4	-55 °C	150 °C	PG-TO247-4	600 V	70 nC	10 V	4.5 V	99 mOhm	219 W	20 V	MOSFET (Metal Oxide)	37.9 A
Infineon Technologies IPZ60R037P7XKSA1	Through Hole	N-Channel	5243 pF	TO-247-4	-55 °C	150 °C	PG-TO247-4	650 V		10 V	4 V	37 mOhm	255 W	20 V	MOSFET (Metal Oxide)	76 A	121 nC
Infineon Technologies IPZ60R041P6FKSA1	Through Hole	N-Channel	8180 pF	TO-247-4	-55 °C	150 °C	PG-TO247-4	600 V		10 V	4.5 V	41 mOhm	481 W	20 V	MOSFET (Metal Oxide)	77.5 A	170 nC