BUK6D210-60EX

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Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 60V 5.7A 6-PIN DFN2020MD T/R

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BUK6D210-60EX

Active

Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 60V 5.7A 6-PIN DFN2020MD T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK6D210-60E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6D210-60EX

Current - Continuous Drain (Id) (Ta)	2.1 A
Current - Continuous Drain (Id) (Tc)	5.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	3.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	110 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	15 W, 2 W
Qualification	AEC-Q101
Rds On (Max)	210 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.7 V

BUK6D210-60E Series

60 V, N-channel Trench MOSFET

Part	Grade	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Technology	Qualification	Package Name	Vgs (Max)	Vgs(th) (Max)	Rds On (Max)	FET Type	Package / Case	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)
Nexperia USA Inc. BUK6D210-60EX	Automotive	3.8 nC	60 V	-55 °C	175 °C	5.7 A	2.1 A	110 pF	MOSFET (Metal Oxide)	AEC-Q101	DFN2020MD-6	20 V	2.7 V	210 mOhm	N-Channel	6-UDFN Exposed Pad	Surface Mount	10 V	4.5 V	2 W 15 W