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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Grade | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Input Capacitance (Ciss) (Max) | Technology | Qualification | Package Name | Vgs (Max) | Vgs(th) (Max) | Rds On (Max) | FET Type | Package / Case | Mounting Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | 3.8 nC | 60 V | -55 °C | 175 °C | 5.7 A | 2.1 A | 110 pF | MOSFET (Metal Oxide) | AEC-Q101 | DFN2020MD-6 | 20 V | 2.7 V | 210 mOhm | N-Channel | 6-UDFN Exposed Pad | Surface Mount | 10 V | 4.5 V | 2 W 15 W |