DF2S6P2FU,H3F

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Toshiba Semiconductor and Storage

TVS DIODE 5.5VWM 23.7VC USC

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Toshiba Semiconductor and Storage

TVS DIODE 5.5VWM 23.7VC USC

Technical Specifications

Parameters and characteristics for this part

Specification	DF2S6P2FU,H3F

Applications	General Purpose
Capacitance @ Frequency	600 pF
Current - Peak Pulse (10/1000µs)	80 A
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOD-323, SC-76
Power - Peak Pulse	1.9 kW
Power - Peak Pulse	1900 W
Power Line Protection	False
Supplier Device Package	USC
Type	Zener
Unidirectional Channels [custom]	1
Voltage - Breakdown (Min) [Min]	5.6 V
Voltage - Clamping (Max) @ Ipp [Max]	23.7 V
Voltage - Reverse Standoff (Typ)	5.5 V

Part	Type	Applications	Operating Temperature	Unidirectional Channels [custom]	Supplier Device Package	Capacitance @ Frequency	Voltage - Reverse Standoff (Typ)	Mounting Type	Package / Case	Voltage - Breakdown (Min) [Min]	Current - Peak Pulse (10/1000µs)	Power - Peak Pulse	Power - Peak Pulse	Voltage - Clamping (Max) @ Ipp [Max]	Voltage - Clamping (Max) @ Ipp
Toshiba Semiconductor and Storage DF2S6P2CTC,L3F	Zener	USB	150 °C	1	CST2C	600 pF	5.5 V	Surface Mount	2-SMD No Lead	5.6 V
Toshiba Semiconductor and Storage DF2S6P2FU,H3F	Zener	General Purpose	150 °C	1	USC	600 pF	5.5 V	Surface Mount	SC-76 SOD-323	5.6 V	80 A	1.9 kW	1900 W	23.7 V
Toshiba Semiconductor and Storage DF2S6M5SL,L3F	Zener	General Purpose	150 °C	1	SL2	0.6 pF	5 V	Surface Mount	2-SMD No Lead	5.5 V	2.5 A		37 W		17 V

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General part information

23.7V Clamp 80A (8/20µs) Ipp Tvs Diode Surface Mount USC

Technical documentation and resources