IPD30N06S4L23ATMA1

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Infineon Technologies

MOSFET N-CH 60V 30A TO252-3

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Unknown

Infineon Technologies

MOSFET N-CH 60V 30A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD30N06S4L23ATMA1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs [Max]	23 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPD30N03S2L07ATMA1	MOSFET (Metal Oxide)	6.7 mOhm	PG-TO252-3-11	136 W	N-Channel	30 A	1900 pF	2 V	4.5 V 10 V	Surface Mount	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	68 nC	30 V	20 V
Infineon Technologies IPD30N06S223ATMA1	MOSFET (Metal Oxide)	23 mOhm	PG-TO252-3-11		N-Channel	30 A	901 pF	4 V	10 V	Surface Mount	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3		55 V	20 V	100 W	32 nC
Infineon Technologies IPD30N06S4L23ATMA1	MOSFET (Metal Oxide)		PG-TO252-3-11	36 W	N-Channel	30 A			4.5 V 10 V	Surface Mount	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	21 nC	60 V	16 V			1560 pF	2.2 V	23 mOhm
Infineon Technologies IPD30N06S2-15	MOSFET (Metal Oxide)	14.7 mOhm	PG-TO252-3-11	136 W	N-Channel	30 A	1485 pF	4 V	10 V	Surface Mount	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	110 nC	55 V	20 V
Infineon Technologies IPD30N06S2L23ATMA1	MOSFET (Metal Oxide)	23 mOhm	PG-TO252-3-11		N-Channel	30 A	1091 pF	2 V	4.5 V 10 V	Surface Mount	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3		55 V	20 V	100 W	42 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 30A (Tc) 36W (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources