IPD30N Series

Catalog

MOSFET N-CH 30V 30A TO252-3

Part	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPD30N03S2L07ATMA1	MOSFET (Metal Oxide)	6.7 mOhm	PG-TO252-3-11	136 W	N-Channel	30 A	1900 pF	2 V	4.5 V 10 V	Surface Mount	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	68 nC	30 V	20 V
Infineon Technologies IPD30N06S223ATMA1	MOSFET (Metal Oxide)	23 mOhm	PG-TO252-3-11		N-Channel	30 A	901 pF	4 V	10 V	Surface Mount	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3		55 V	20 V	100 W	32 nC
Infineon Technologies IPD30N06S4L23ATMA1	MOSFET (Metal Oxide)		PG-TO252-3-11	36 W	N-Channel	30 A			4.5 V 10 V	Surface Mount	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	21 nC	60 V	16 V			1560 pF	2.2 V	23 mOhm
Infineon Technologies IPD30N06S2-15	MOSFET (Metal Oxide)	14.7 mOhm	PG-TO252-3-11	136 W	N-Channel	30 A	1485 pF	4 V	10 V	Surface Mount	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	110 nC	55 V	20 V
Infineon Technologies IPD30N06S2L23ATMA1	MOSFET (Metal Oxide)	23 mOhm	PG-TO252-3-11		N-Channel	30 A	1091 pF	2 V	4.5 V 10 V	Surface Mount	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3		55 V	20 V	100 W	42 nC