BUK6D81-80EX

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Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 80V 9.8A 6-PIN DFN2020MD T/R

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BUK6D81-80EX

Active

Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 80V 9.8A 6-PIN DFN2020MD T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK6D81-80E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6D81-80EX

Current - Continuous Drain (Id) (Ta)	3.2 A
Current - Continuous Drain (Id) (Tc)	9.8 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14.9 nC, 14.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	504 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	2 W, 18.8 W
Qualification	AEC-Q101
Rds On (Max)	81 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.7 V

BUK6D81-80E Series

80 V, N-channel Trench MOSFET

Part	Vgs (Max)	Mounting Type	Qualification	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Power Dissipation (Max)	Gate Charge (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package Name	Rds On (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Grade
Nexperia USA Inc. BUK6D81-80EX	20 V	Surface Mount	AEC-Q101	-55 °C	175 °C	MOSFET (Metal Oxide)	2 W 18.8 W	14.9 nC 14.9 nC	6-UDFN Exposed Pad	10 V	4.5 V	80 V	2.7 V	DFN2020MD-6	81 mOhm	N-Channel	3.2 A	9.8 A	504 pF	Automotive