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80 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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80 V, N-channel Trench MOSFET
80 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Mounting Type | Qualification | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Power Dissipation (Max) | Gate Charge (Max) | Package / Case | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Package Name | Rds On (Max) | FET Type | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Input Capacitance (Ciss) (Max) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | Surface Mount | AEC-Q101 | -55 °C | 175 °C | MOSFET (Metal Oxide) | 2 W 18.8 W | 14.9 nC 14.9 nC | 6-UDFN Exposed Pad | 10 V | 4.5 V | 80 V | 2.7 V | DFN2020MD-6 | 81 mOhm | N-Channel | 3.2 A | 9.8 A | 504 pF | Automotive |