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VQFN (REQ)

LMG3624REQR

Active
Texas Instruments

650V 170MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND CURRENT SENSING

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VQFN (REQ)

LMG3624REQR

Active
Texas Instruments

650V 170MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND CURRENT SENSING

Find alt

Description

General part information

LMG3624 Series

The LMG3624 is a 650V 170mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3624 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8mm by 5.3mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3624 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

Technical Specifications

Parameters and characteristics for this part

SpecificationLMG3624REQR
Current - Output (Max)16 A
Fault ProtectionCurrent Limiting (Fixed), Over Temperature
FeaturesStatus Flag
Input Ratio1
Input TypeNon-Inverting
InterfaceOn/Off
Mounting TypeSurface Mount
Number of Outputs1
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Output ConfigurationHigh Side
Output Ratio1
Output TypeN-Channel
Package / Case38-VFQFN Exposed Pad
Package Length8 mm
Package Name38-VQFN
Package Width5.3 mm
Rds On (Typ)170 mOhm
Switch TypeGeneral Purpose
Voltage - Load650 V
Voltage - Supply (Vcc/Vdd) Maximum26 V
Voltage - Supply (Vcc/Vdd) Minimum10 V

Pricing

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CAD

3D models and CAD resources for this part