
PMV37EN2R
ActiveNexperia USA Inc.
POWER MOSFET, N CHANNEL, 30 V, 4.5 A, 0.031 OHM, TO-236AB, SURFACE MOUNT

PMV37EN2R
ActiveNexperia USA Inc.
POWER MOSFET, N CHANNEL, 30 V, 4.5 A, 0.031 OHM, TO-236AB, SURFACE MOUNT
Description
General part information
PMV37 Series
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | PMV37EN2R |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 6.3 nC |
| Input Capacitance (Ciss) (Max) | 209 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power Dissipation (Max) | 5 W, 510 mW |
| Rds On (Max) | 36 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Reel pack for SMD, 7"; Q3/T4 product orientation
Reflow soldering profile
Power MOSFET frequently asked questions and answers
Using power MOSFETs in parallel
Questions about package outline drawings
Nexperia package poster
LFPAK MOSFET thermal design guide, Chinese version
Wave soldering profile
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
LFPAK MOSFET thermal design guide - Part 2
RC Thermal Models