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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Vgs (Max) | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Rds On (Max) | Package / Case | Technology | FET Type | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 10 V | 4.5 V | -55 °C | 150 °C | TO-236AB | 20 V | 4.5 A | 6.3 nC | 209 pF | 5 W 510 mW | 36 mOhm | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | N-Channel | 2 V | 30 V | Surface Mount | ||
Nexperia USA Inc. | 10 V | 4.5 V | -55 °C | 175 °C | TO-236AB | 20 V | 3.5 A | 13 nC | 450 pF | 8.3 W 710 mW | 49 mOhm | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | N-Channel | 2.7 V | 60 V | Surface Mount | Automotive | AEC-Q101 |