BUK4D60-30X

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Nexperia USA Inc.

MOSFETS 40 V, N-CHANNEL TRENCH MOSFET

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BUK4D60-30X

Active

Nexperia USA Inc.

MOSFETS 40 V, N-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK4D60-30 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK4D60-30X

Current - Continuous Drain (Id) (Ta)	4.2 A
Current - Continuous Drain (Id) (Tc)	8.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Max)	5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	296 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	7.5 W, 2 W
Qualification	AEC-Q101
Rds On (Max)	57 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.25 V

BUK4D60-30 Series

30 V, N-channel Trench MOSFET

Part	Qualification	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Gate Charge (Max)	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max)	Package Name	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Grade	Power Dissipation (Max)	FET Type	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Nexperia USA Inc. BUK4D60-30X	AEC-Q101	30 V	Surface Mount	6-UDFN Exposed Pad	5 nC	12 V	MOSFET (Metal Oxide)	296 pF	DFN2020MD-6	2.5 V	8 V	Automotive	2 W 7.5 W	N-Channel	57 mOhm	8.3 A	4.2 A	1.25 V	-55 °C	175 °C