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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Qualification | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Gate Charge (Max) | Vgs (Max) | Technology | Input Capacitance (Ciss) (Max) | Package Name | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Grade | Power Dissipation (Max) | FET Type | Rds On (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | AEC-Q101 | 30 V | Surface Mount | 6-UDFN Exposed Pad | 5 nC | 12 V | MOSFET (Metal Oxide) | 296 pF | DFN2020MD-6 | 2.5 V | 8 V | Automotive | 2 W 7.5 W | N-Channel | 57 mOhm | 8.3 A | 4.2 A | 1.25 V | -55 °C | 175 °C |