IPB60R360CFD7ATMA1

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Infineon Technologies

MOSFET N-CH 600V 7A TO263-3

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LTB

Infineon Technologies

MOSFET N-CH 600V 7A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R360CFD7ATMA1

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	679 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	43 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPB60R360CFD7ATMA1	10 V	360 mOhm	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	Surface Mount	7 A	20 V	43 W	N-Channel	679 pF	14 nC	4.5 V	PG-TO263-3-2	-55 °C	150 °C
Infineon Technologies IPB60R360P7ATMA1	10 V	360 mOhm	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	Surface Mount	9 A	20 V		N-Channel	555 pF		4 V		-55 °C	150 °C	41 W	13 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 7A (Tc) 43W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources