IPB60R360 Series

Catalog

MOSFET N-CH 600V 7A TO263-3

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPB60R360CFD7ATMA1	10 V	360 mOhm	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	Surface Mount	7 A	20 V	43 W	N-Channel	679 pF	14 nC	4.5 V	PG-TO263-3-2	-55 °C	150 °C
Infineon Technologies IPB60R360P7ATMA1	10 V	360 mOhm	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	Surface Mount	9 A	20 V		N-Channel	555 pF		4 V		-55 °C	150 °C	41 W	13 nC