BSS84AKV,115

NRND

Nexperia USA Inc.

TRANSISTOR: P-MOSFET X2; UNIPOLAR; -50V; -110MA; IDM: -0.7A; 500MW

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BSS84AKV,115

NRND

Nexperia USA Inc.

TRANSISTOR: P-MOSFET X2; UNIPOLAR; -50V; -110MA; IDM: -0.7A; 500MW

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Description Specifications Series Pricing CAD Documents

Description

General part information

BSS84AKV Series

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BSS84AKV,115

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	170 mA
Drain to Source Voltage (Vdss)	50 V
FET Feature	Logic Level Gate
Gate Charge (Max)	0.35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	36 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SOT-666
Power - Max	0.5 W
Qualification	AEC-Q101
Rds On (Max)	7.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.1 V

BSS84AKV Series

50 V, 170 mA dual P-channel Trench MOSFET

Part	Power - Max	Input Capacitance (Ciss) (Max)	Channel Count	Configuration	Configuration - Features	Rds On (Max)	Package / Case	Gate Charge (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	Technology	Grade	Vgs(th) (Max)	Package Name	FET Feature	Current - Continuous Drain (Id)
Nexperia USA Inc. BSS84AKV,115	0.5 W	36 pF	2	P-Channel	Dual	7.5 Ohm	SOT-563 SOT-666	0.35 nC	Surface Mount	50 V	-55 °C	150 °C	AEC-Q101	MOSFET (Metal Oxide)	Automotive	2.1 V	SOT-666	Logic Level Gate	170 mA