50 V, 170 mA dual P-channel Trench MOSFET
50 V, 170 mA dual P-channel Trench MOSFET
| Part | Power - Max | Input Capacitance (Ciss) (Max) | Channel Count | Configuration | Configuration - Features | Rds On (Max) | Package / Case | Gate Charge (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Qualification | Technology | Grade | Vgs(th) (Max) | Package Name | FET Feature | Current - Continuous Drain (Id) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 0.5 W | 36 pF | 2 | P-Channel | Dual | 7.5 Ohm | SOT-563 SOT-666 | 0.35 nC | Surface Mount | 50 V | -55 °C | 150 °C | AEC-Q101 | MOSFET (Metal Oxide) | Automotive | 2.1 V | SOT-666 | Logic Level Gate | 170 mA |