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STL4P3LLH6 - 6-WDFN Exposed Pad

STL4P3LLH6

Active
STMicroelectronics

P-CHANNEL 30 V, 0.048 OHM TYP., 4 A STRIPFET H6 POWER MOSFET IN POWERFLAT(TM) 2X2 PACKAGE

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STL4P3LLH6 - 6-WDFN Exposed Pad

STL4P3LLH6

Active
STMicroelectronics

P-CHANNEL 30 V, 0.048 OHM TYP., 4 A STRIPFET H6 POWER MOSFET IN POWERFLAT(TM) 2X2 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL4P3LLH6
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]6 nC
Input Capacitance (Ciss) (Max) @ Vds639 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-PowerWDFN
Power Dissipation (Max)2.4 W
Rds On (Max) @ Id, Vgs56 mOhm
Supplier Device PackagePowerFlat™ (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.72
10$ 0.51
100$ 0.35
500$ 0.28
1000$ 0.24
Digi-Reel® 1$ 0.72
10$ 0.51
100$ 0.35
500$ 0.28
1000$ 0.24
Tape & Reel (TR) 3000$ 0.19
6000$ 0.18
9000$ 0.17
15000$ 0.17
NewarkEach (Supplied on Cut Tape) 1$ 0.76
10$ 0.57
25$ 0.52
50$ 0.47
100$ 0.42
250$ 0.39
500$ 0.35
1000$ 0.33

Description

General part information

STL4P3LLH6 Series

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.