STL4P3LLH6 Series

P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in PowerFLAT(TM) 2x2 package

Catalog

P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in PowerFLAT(TM) 2x2 package

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	FET Type	Package / Case	Rds On (Max) @ Id, Vgs
STMicroelectronics STL4P3LLH6	2.4 W	4.5 V 10 V	150 °C	6 nC	4 A	Surface Mount	PowerFlat™ (2x2)	2.5 V	30 V	639 pF	20 V	MOSFET (Metal Oxide)	P-Channel	6-PowerWDFN	56 mOhm

Catalog

P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in PowerFLAT(TM) 2x2 package

Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.