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1EDN8511BXUSA1

1EDN8511BXUSA1

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INFINEON

EICEDRIVER™ 20 V LOW-SIDE DRIVER IC WITH TYPICAL 4 A SOURCE AND 8 A SINK OUTPUT CURRENTS. IT COMES WITH A NON-ISOLATED PG-SOT23-6 PACKAGE AND WORKS WITH GAN HEMTS, IGBTS AND MOSFETS. FEATURES: ENABLE, SEPARATE SINK/SOURCE OUTPUTS

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1EDN8511BXUSA1

1EDN8511BXUSA1

Active
INFINEON

EICEDRIVER™ 20 V LOW-SIDE DRIVER IC WITH TYPICAL 4 A SOURCE AND 8 A SINK OUTPUT CURRENTS. IT COMES WITH A NON-ISOLATED PG-SOT23-6 PACKAGE AND WORKS WITH GAN HEMTS, IGBTS AND MOSFETS. FEATURES: ENABLE, SEPARATE SINK/SOURCE OUTPUTS

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Description

General part information

1EDN8511 Series

1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness. 1EDN family: Fast, precise, strong and compatible

Technical Specifications

Parameters and characteristics for this part

Specification1EDN8511BXUSA1
Channel TypeSingle
Current - Peak Output (Sink)8 A
Current - Peak Output (Source)4 A
Driven ConfigurationLow-Side
Fall Time (Typ)4.5 ns
Gate ChannelN-Channel, P-Channel
Gate TypeMOSFET, N-Channel, P-Channel MOSFET, GaN FET
High Side Voltage - Max (Bootstrap)200 V
Input TypeInverting, Non-Inverting
Logic Voltage - VIH1.9 V
Logic Voltage - VIL1.2 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseSOT-23-6
Package NamePG-SOT23-6-2
Rise Time (Typ)6.5 ns
Voltage - Supply (Maximum)20 V
Voltage - Supply (Minimum)8 V

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CAD

3D models and CAD resources for this part