Specification	1EDN8511BXTSA1

Channel Type	Single
Current - Peak Output (Sink)	8 A
Current - Peak Output (Source)	4 A
Driven Configuration	Low-Side, Half-Bridge
Fall Time (Typ)	4.5 ns
Gate Channel	N-Channel, P-Channel
Gate Type	MOSFET, GaN FET, N-Channel, P-Channel MOSFET
High Side Voltage - Max (Bootstrap)	20 V
Input Type	Inverting, Non-Inverting
Logic Voltage - VIH	1.9 V
Logic Voltage - VIL	1.2 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	SOT-23-6
Package Name	PG-SOT23-6-2
Rise Time (Typ)	6.5 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	4.5 V

1EDN8511 Series

Part	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Number of Drivers	Fall Time (Typ)	Rise Time (Typ)	Gate Type	Gate Channel	Driven Configuration	Channel Type	Mounting Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Logic Voltage - VIH	Logic Voltage - VIL	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Input Type	High Side Voltage - Max (Bootstrap)
INFINEON 1EDN8511BXUSA1	20 V	8 V	1	4.5 ns	6.5 ns	GaN FET MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Low-Side	Single	Surface Mount	8 A	4 A	1.9 V	1.2 V	SOT-23-6	-40 °C	150 °C	PG-SOT23-6-2	Inverting Non-Inverting	200 V
INFINEON 1EDN8511BXTSA1	20 V	4.5 V	1	4.5 ns	6.5 ns	GaN FET MOSFET N-Channel P-Channel MOSFET	N-Channel P-Channel	Half-Bridge Low-Side	Single	Surface Mount	8 A	4 A	1.9 V	1.2 V	SOT-23-6	-40 °C	150 °C	PG-SOT23-6-2	Inverting Non-Inverting	20 V

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