DMT64M8LCG-7

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Diodes Inc

TRANSISTOR MOSFET N-CH 60V 16.1A 8-PIN V-DFN3333 T/R

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DMT64M8LCG-7

Active

Diodes Inc

TRANSISTOR MOSFET N-CH 60V 16.1A 8-PIN V-DFN3333 T/R

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMT64M8LCG-7

Current - Continuous Drain (Id) @ 25°C	16.1 A, 77.8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	47.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2664 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	990 mW
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	V-DFN3333-8 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

DMT64M8LCG Series

60V N-Channel Enhancement Mode MOSFET

Part	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMT64M8LCG-7	MOSFET (Metal Oxide)	4.8 mOhm	60 V	47.5 nC	20 V	N-Channel	990 mW	V-DFN3333-8 (Type B)	2664 pF	8-PowerVDFN	4.5 V 10 V	Surface Mount	16.1 A 77.8 A	2.4 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.92
		10	$ 0.75
		100	$ 0.58
		500	$ 0.50
		1000	$ 0.40
	Digi-Reel®	1	$ 0.92
		10	$ 0.75
		100	$ 0.58
		500	$ 0.50
		1000	$ 0.40
	Tape & Reel (TR)	2000	$ 0.38
		6000	$ 0.36
		10000	$ 0.35

Description

General part information

DMT64M8LCG Series

This new generation N-channel enhancement mode MOSFET isdesigned to minimize RDS(ON) yet maintain superior switchingperformance. This device is ideal for use in Notebook battery powermanagement and load switch.