DMT64M8LCG Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMT64M8LCG-7	MOSFET (Metal Oxide)	4.8 mOhm	60 V	47.5 nC	20 V	N-Channel	990 mW	V-DFN3333-8 (Type B)	2664 pF	8-PowerVDFN	4.5 V 10 V	Surface Mount	16.1 A 77.8 A	2.4 V	-55 °C	150 °C

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production

• High Conversion Efficiency

• Low RDS(ON)—Minimizes On State Losses

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen- and Antimony-Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact us or your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation N-channel enhancement mode MOSFET isdesigned to minimize RDS(ON) yet maintain superior switchingperformance. This device is ideal for use in Notebook battery powermanagement and load switch.