Specification	HN1C01FE-GR,LF

Current - Collector (Ic) (Max)	0.15 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	200
Frequency - Transition	80 MHz
Mounting Type	Surface Mount
NPN Count	2
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Package Name	ES6
Power - Max	100 mW
Transistor Configuration	Dual
Transistor Type	NPN
Vce Saturation (Max)	250 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

HN1C01FE Series

Bipolar Transistors, NPN + NPN Bipolar Transistor, 50 V, 0.15 A, SOT-563(ES6)

Part	Operating Temperature	NPN Count	Transistor Type	Transistor Configuration	Package / Case	Frequency - Transition	Mounting Type	Power - Max	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min)	Current - Collector (Ic) (Max)	Package Name	Current - Collector Cutoff (Max)	Vce Saturation (Max)
Toshiba Semiconductor and Storage HN1C01FU-Y,LF	125 °C	2	NPN	Dual	6-TSSOP SC-88 SOT-363	80 MHz	Surface Mount	200 mW	50 V	120	0.15 mA	US6	100 nA	250 mV
Toshiba Semiconductor and Storage HN1C01FU-GR,LF	125 °C	2	NPN	Dual	6-TSSOP SC-88 SOT-363	80 MHz	Surface Mount	200 mW	50 V	200	0.15 mA	US6	100 nA	250 mV
Toshiba Semiconductor and Storage HN1C01FU-GR,LXHF		2	NPN	Dual	6-TSSOP SC-88 SOT-363	80 MHz	Surface Mount	200 mW	50 V	200	0.15 mA	US6	100 nA	250 mV
Toshiba Semiconductor and Storage HN1C01FU-Y,LXHF		2	NPN	Dual	6-TSSOP SC-88 SOT-363	80 MHz	Surface Mount	200 mW	50 V	120	0.15 mA	US6	100 nA	250 mV