HN1C01FU-Y,LF

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Toshiba Semiconductor and Storage

NPN + NPN IND. TRANSISTOR VCEO50

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Toshiba Semiconductor and Storage

NPN + NPN IND. TRANSISTOR VCEO50

Technical Specifications

Parameters and characteristics for this part

Specification	HN1C01FU-Y,LF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Supplier Device Package	US6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Supplier Device Package	Transistor Type
Toshiba Semiconductor and Storage HN1C01FU-Y,LF	50 V	6-TSSOP SC-88 SOT-363	100 nA	125 ¯C	250 mV	150 mA	Surface Mount	120	200 mW	US6	2 NPN (Dual)
Toshiba Semiconductor and Storage HN1C01FYTE85LF	50 V	SC-74 SOT-457	100 nA	125 ¯C	250 mV	150 mA	Surface Mount	120	300 mW	SM6	2 NPN (Dual)
Toshiba Semiconductor and Storage HN1C01FE-Y,LF	50 V	SOT-563 SOT-666	100 nA	150 °C	250 mV	150 mA	Surface Mount	120	100 mW	ES6	2 NPN (Dual)

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General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 200mW Surface Mount US6

Technical documentation and resources