HN1C01FU-Y,LXHF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS - BJT AUTO AEC-Q NPN + NPN TR VCEO:50V IC:0.15A HFE:120-240 SOT-363 (US6)
HN1C01FU-Y,LXHF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS - BJT AUTO AEC-Q NPN + NPN TR VCEO:50V IC:0.15A HFE:120-240 SOT-363 (US6)
Description
General part information
HN1C01FU Series
BIPOLAR TRANSISTORS - BJT AUTO AEC-Q NPN + NPN TR VCEO:50V IC:0.15A HFE:120-240 SOT-363 (US6)
Technical Specifications
Parameters and characteristics for this part
| Specification | HN1C01FU-Y,LXHF |
|---|---|
| Current - Collector (Ic) (Max) | 0.15 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 120 |
| Frequency - Transition | 80 MHz |
| Mounting Type | Surface Mount |
| NPN Count | 2 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | US6 |
| Power - Max | 200 mW |
| Transistor Configuration | Dual |
| Transistor Type | NPN |
| Vce Saturation (Max) | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
HN1C01FU-Y,LXHF | Datasheet
The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes
The thermal stability and thermal design:Bipolar Transistor Application Notes
Surface Mount Small Signal Transistor (BJT) Precautions for use
Basics of Diodes (Power Losses and Thermal Design)
The maximum ratings:Bipolar Transistor Application Notes
Basics of Diodes (Types and Overview of Diodes)
Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
HN1C01FU Data sheet/Japanese
Selection Guide Small Signal 2025 Rev1.0
The terms used in data sheets:Bipolar Transistor Application Notes
