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PMDXB290UNEZ

PMDXB290UNEZ

Active
Nexperia USA Inc.

20 V, DUAL N-CHANNEL TRENCH MOSFET

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PMDXB290UNEZ

PMDXB290UNEZ

Active
Nexperia USA Inc.

20 V, DUAL N-CHANNEL TRENCH MOSFET

Find alt

Description

General part information

PMDXB290UNE Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDXB290UNEZ
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Ta)930 mA
Current - Continuous Drain (Id) (Tc)3.5 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Max)0.9 nC
Input Capacitance (Ciss) (Max)43.6 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-XFDFN Exposed Pad
Package NameDFN1010B-6
Power - Max (Ta)280 mW
Power - Max (Tc)6 W
Rds On (Max)320 mOhm, 320 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1 V

Pricing

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CAD

3D models and CAD resources for this part