20 V, dual N-channel Trench MOSFET
20 V, dual N-channel Trench MOSFET
| Part | Gate Charge (Max) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Package Name | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Channel Count | Configuration | Configuration - Features | Mounting Type | Power - Max (Tc) | Power - Max (Ta) | Package / Case | Technology | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 0.9 nC | 1 V | 43.6 pF | 3.5 A | 930 mA | DFN1010B-6 | -55 °C | 150 °C | 20 V | 2 | N-Channel | Dual | Surface Mount | 6 W | 280 mW | 6-XFDFN Exposed Pad | MOSFET (Metal Oxide) | 320 mOhm 320 mOhm |