Specification	TLP292-4(LGBTR,E

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	600 %
Current Transfer Ratio (Min)	100 %
Fall Time (Typ)	3 µs
Input Type	AC, DC
Mounting Type	Surface Mount
Number of Channels	4
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-55 °C
Output Type	Transistor
Package Length	0.179 in
Package Name	16-SO, 16-SOIC
Package Width	4.55 mm
Rise Time (Typ)	2 µs
Turn Off Time (Typ)	3 µs
Turn On Time (Typ)	3 µs
Vce Saturation (Max)	300 mV
Voltage - Forward (Vf) (Typ)	1.25 V
Voltage - Isolation	3750 VDC
Voltage - Output (Max)	80 V

TLP292-4 Series

Part	Package Name	Voltage - Isolation	Output Type	Package Length	Package Width	Voltage - Output (Max)	Mounting Type	Current Transfer Ratio (Min)	Number of Channels	Operating Temperature (Max)	Operating Temperature (Min)	Turn On Time (Typ)	Turn Off Time (Typ)	Rise Time (Typ)	Fall Time (Typ)	Input Type	Current - DC Forward (If) (Max)	Vce Saturation (Max)	Voltage - Forward (Vf) (Typ)	Current - Output / Channel	Current Transfer Ratio (Max)
Toshiba Semiconductor and Storage TLP292-4(V4-TP,E	16-SO 16-SOIC	3750 VDC	Transistor	0.179 in	4.55 mm	80 V	Surface Mount	50 %	4	125 °C	-55 °C	3 µs	3 µs	2 µs	3 µs	AC DC	50 mA	300 mV	1.25 V	50 mA	600 %
Toshiba Semiconductor and Storage TLP292-4(GB-TP,E	16-SO 16-SOIC	3750 VDC	Transistor	0.179 in	4.55 mm	80 V	Surface Mount	100 %	4	125 °C	-55 °C	3 µs	3 µs	2 µs	3 µs	AC DC	50 mA	300 mV	1.25 V	50 mA	600 %
Toshiba Semiconductor and Storage TLP292-4(TP,E	16-SO 16-SOIC	3750 VDC	Transistor	0.179 in	4.55 mm	80 V	Surface Mount	50 %	4	125 °C	-55 °C	3 µs	3 µs	2 µs	3 µs	AC DC	50 mA	300 mV	1.25 V	50 mA	600 %
Toshiba Semiconductor and Storage TLP292-4(LA-TP,E	16-SO 16-SOIC	3750 VDC	Transistor	0.179 in	4.55 mm	80 V	Surface Mount	50 %	4	125 °C	-55 °C	3 µs	3 µs	2 µs	3 µs	AC DC	50 mA	300 mV	1.25 V	50 mA	600 %
Toshiba Semiconductor and Storage TLP292-4(V4GBTPE	16-SO 16-SOIC	3750 VDC	Transistor	0.179 in	4.55 mm	80 V	Surface Mount	100 %	4	125 °C	-55 °C	3 µs	3 µs	2 µs	3 µs	AC DC	50 mA	300 mV	1.25 V	50 mA	600 %
Toshiba Semiconductor and Storage TLP292-4(V4-TR,E	16-SO 16-SOIC	3750 VDC	Transistor	0.179 in	4.55 mm	80 V	Surface Mount	50 %	4	125 °C	-55 °C	3 µs	3 µs	2 µs	3 µs	AC DC	50 mA	300 mV	1.25 V	50 mA	600 %
Toshiba Semiconductor and Storage TLP292-4(V4LATPE	16-SO 16-SOIC	3750 VDC	Transistor	0.179 in	4.55 mm	80 V	Surface Mount	50 %	4	125 °C	-55 °C	3 µs	3 µs	2 µs	3 µs	AC DC	50 mA	300 mV	1.25 V	50 mA	600 %
Toshiba Semiconductor and Storage TLP292-4(4LGBTPE	16-SO 16-SOIC	3750 VDC	Transistor	0.179 in	4.55 mm	80 V	Surface Mount	100 %	4	125 °C	-55 °C	3 µs	3 µs	2 µs	3 µs	AC DC	50 mA	300 mV	1.25 V	50 mA	600 %
Toshiba Semiconductor and Storage TLP292-4(LGBTR,E	16-SO 16-SOIC	3750 VDC	Transistor	0.179 in	4.55 mm	80 V	Surface Mount	100 %	4	125 °C	-55 °C	3 µs	3 µs	2 µs	3 µs	AC DC	50 mA	300 mV	1.25 V	50 mA	600 %

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TLP292-4(LGBTR,E | Datasheet