TLP292-4 Series
Manufacturer: Toshiba Semiconductor and Storage
ISOLATORS AND SOLID STATE RELAYS FOR ENHANCED SAFETY AND EFFICIENCY | TOSHIBA, PHOTOCOUPLER (PHOTOTRANSISTOR OUTPUT), AC INPUT, 3750 VRMS, SO16
| Part | Package Name | Voltage - Isolation | Output Type | Package Length | Package Width | Voltage - Output (Max) | Mounting Type | Current Transfer Ratio (Min) | Number of Channels | Operating Temperature (Max) | Operating Temperature (Min) | Turn On Time (Typ) | Turn Off Time (Typ) | Rise Time (Typ) | Fall Time (Typ) | Input Type | Current - DC Forward (If) (Max) | Vce Saturation (Max) | Voltage - Forward (Vf) (Typ) | Current - Output / Channel | Current Transfer Ratio (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 16-SO 16-SOIC | 3750 VDC | Transistor | 0.179 in | 4.55 mm | 80 V | Surface Mount | 50 % | 4 | 125 °C | -55 °C | 3 µs | 3 µs | 2 µs | 3 µs | AC DC | 50 mA | 300 mV | 1.25 V | 50 mA | 600 % |
Toshiba Semiconductor and Storage | 16-SO 16-SOIC | 3750 VDC | Transistor | 0.179 in | 4.55 mm | 80 V | Surface Mount | 100 % | 4 | 125 °C | -55 °C | 3 µs | 3 µs | 2 µs | 3 µs | AC DC | 50 mA | 300 mV | 1.25 V | 50 mA | 600 % |
Toshiba Semiconductor and Storage | 16-SO 16-SOIC | 3750 VDC | Transistor | 0.179 in | 4.55 mm | 80 V | Surface Mount | 50 % | 4 | 125 °C | -55 °C | 3 µs | 3 µs | 2 µs | 3 µs | AC DC | 50 mA | 300 mV | 1.25 V | 50 mA | 600 % |
Toshiba Semiconductor and Storage | 16-SO 16-SOIC | 3750 VDC | Transistor | 0.179 in | 4.55 mm | 80 V | Surface Mount | 50 % | 4 | 125 °C | -55 °C | 3 µs | 3 µs | 2 µs | 3 µs | AC DC | 50 mA | 300 mV | 1.25 V | 50 mA | 600 % |
Toshiba Semiconductor and Storage | 16-SO 16-SOIC | 3750 VDC | Transistor | 0.179 in | 4.55 mm | 80 V | Surface Mount | 100 % | 4 | 125 °C | -55 °C | 3 µs | 3 µs | 2 µs | 3 µs | AC DC | 50 mA | 300 mV | 1.25 V | 50 mA | 600 % |
Toshiba Semiconductor and Storage | 16-SO 16-SOIC | 3750 VDC | Transistor | 0.179 in | 4.55 mm | 80 V | Surface Mount | 50 % | 4 | 125 °C | -55 °C | 3 µs | 3 µs | 2 µs | 3 µs | AC DC | 50 mA | 300 mV | 1.25 V | 50 mA | 600 % |
Toshiba Semiconductor and Storage | 16-SO 16-SOIC | 3750 VDC | Transistor | 0.179 in | 4.55 mm | 80 V | Surface Mount | 50 % | 4 | 125 °C | -55 °C | 3 µs | 3 µs | 2 µs | 3 µs | AC DC | 50 mA | 300 mV | 1.25 V | 50 mA | 600 % |
Toshiba Semiconductor and Storage | 16-SO 16-SOIC | 3750 VDC | Transistor | 0.179 in | 4.55 mm | 80 V | Surface Mount | 100 % | 4 | 125 °C | -55 °C | 3 µs | 3 µs | 2 µs | 3 µs | AC DC | 50 mA | 300 mV | 1.25 V | 50 mA | 600 % |
Toshiba Semiconductor and Storage | 16-SO 16-SOIC | 3750 VDC | Transistor | 0.179 in | 4.55 mm | 80 V | Surface Mount | 100 % | 4 | 125 °C | -55 °C | 3 µs | 3 µs | 2 µs | 3 µs | AC DC | 50 mA | 300 mV | 1.25 V | 50 mA | 600 % |