MSC040SMA120B4N

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Microchip Technology

1200V, 40 MOHM, DISCRETE MSIC™ MOSFET

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MSC040SMA120B4N

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Microchip Technology

1200V, 40 MOHM, DISCRETE MSIC™ MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

MSC040SMA120 Series

MSC040SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	MSC040SMA120B4N

Current - Continuous Drain (Id) (Tc)	71 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On)	18 V
Drive Voltage (Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	137 nC, 137 nC
Input Capacitance (Ciss) (Max)	1962 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	TO-247-4
Power Dissipation (Max)	372 W
Rds On (Max)	50 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	23 V
Vgs(th) (Max)	5 V

MSC040SMA120 Series

1200V, 40 mOhm, Discrete mSiC™ MOSFET

Part	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive	Package / Case	Rds On (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Microchip Technology MSC040SMA120J	1990 pF	137 nC 137 nC	53 A	208 W	1200 V	SiCFET (Silicon Carbide)	Chassis Mount	-10 V	25 V	miniBLOC SOT-227-4	50 mOhm	2.8 V	20 V	-55 °C	175 °C	N-Channel	SOT-227 (ISOTOP®)
Microchip Technology MSC040SMA120S	1990 pF	137 nC 137 nC	64 A	303 W	1200 V	SiCFET (Silicon Carbide)	Surface Mount	-10 V	23 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	50 mOhm	2.6 V	20 V	-55 °C	175 °C	N-Channel	D3PAK
Microchip Technology MSC040SMA120D/S
Microchip Technology MSC040SMA120B	1990 pF	137 nC 137 nC	66 A	323 W	1200 V	SiCFET (Silicon Carbide)	Through Hole	-10 V	23 V	TO-247-3	50 mOhm	2.7 V	20 V	-55 °C	175 °C	N-Channel	TO-247-3
Microchip Technology MSC040SMA120S/TR	1990 pF	137 nC 137 nC	64 A	303 W	1200 V	SiCFET (Silicon Carbide)	Surface Mount	-10 V	23 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	50 mOhm	2.6 V	20 V	-55 °C	175 °C	N-Channel	TO-268
Microchip Technology MSC040SMA120B4	1990 pF	137 nC 137 nC	66 A	323 W	1200 V	SiCFET (Silicon Carbide)	Through Hole	-10 V	23 V	TO-247-4	50 mOhm	2.6 V	20 V	-55 °C	175 °C	N-Channel	TO-247-4
Microchip Technology MSC040SMA120B4N	1962 pF	137 nC 137 nC	71 A	372 W	1200 V	SiCFET (Silicon Carbide)	Through Hole	-10 V	23 V	TO-247-4	50 mOhm	5 V		-55 °C	175 °C	N-Channel	TO-247-4	20 V	18 V