1200V, 40 mOhm, Discrete mSiC™ MOSFET
1200V, 40 mOhm, Discrete mSiC™ MOSFET
| Part | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Current - Continuous Drain (Id) (Tc) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Vgs (Max) Negative | Vgs (Max) Positive | Package / Case | Rds On (Max) | Vgs(th) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | 1990 pF | 137 nC 137 nC | 53 A | 208 W | 1200 V | SiCFET (Silicon Carbide) | Chassis Mount | -10 V | 25 V | miniBLOC SOT-227-4 | 50 mOhm | 2.8 V | 20 V | -55 °C | 175 °C | N-Channel | SOT-227 (ISOTOP®) | ||
 Microchip Technology | 1990 pF | 137 nC 137 nC | 64 A | 303 W | 1200 V | SiCFET (Silicon Carbide) | Surface Mount | -10 V | 23 V | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 50 mOhm | 2.6 V | 20 V | -55 °C | 175 °C | N-Channel | D3PAK | ||
 Microchip Technology | |||||||||||||||||||
 Microchip Technology | 1990 pF | 137 nC 137 nC | 66 A | 323 W | 1200 V | SiCFET (Silicon Carbide) | Through Hole | -10 V | 23 V | TO-247-3 | 50 mOhm | 2.7 V | 20 V | -55 °C | 175 °C | N-Channel | TO-247-3 | ||
 Microchip Technology | 1990 pF | 137 nC 137 nC | 64 A | 303 W | 1200 V | SiCFET (Silicon Carbide) | Surface Mount | -10 V | 23 V | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 50 mOhm | 2.6 V | 20 V | -55 °C | 175 °C | N-Channel | TO-268 | ||
 Microchip Technology | 1990 pF | 137 nC 137 nC | 66 A | 323 W | 1200 V | SiCFET (Silicon Carbide) | Through Hole | -10 V | 23 V | TO-247-4 | 50 mOhm | 2.6 V | 20 V | -55 °C | 175 °C | N-Channel | TO-247-4 | ||
 Microchip Technology | 1962 pF | 137 nC 137 nC | 71 A | 372 W | 1200 V | SiCFET (Silicon Carbide) | Through Hole | -10 V | 23 V | TO-247-4 | 50 mOhm | 5 V | -55 °C | 175 °C | N-Channel | TO-247-4 | 20 V | 18 V |