Specification	TLP293(BLL-TPL,E

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	400 %
Current Transfer Ratio (Min)	200 %
Fall Time (Typ)	3 µs
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-55 °C
Output Type	Transistor
Package Length	0.179 in
Package Name	4-SOIC, 4-SO
Package Width	4.55 mm
Rise Time (Typ)	2 µs
Turn Off Time (Typ)	3 µs
Turn On Time (Typ)	3 µs
Vce Saturation (Max)	300 mV
Voltage - Forward (Vf) (Typ)	1.25 V
Voltage - Isolation	3750 VDC
Voltage - Output (Max)	80 V

TLP293 Series

Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO4

Part	Turn On Time (Typ)	Turn Off Time (Typ)	Package Width	Package Name	Package Length	Voltage - Forward (Vf) (Typ)	Current - DC Forward (If) (Max)	Voltage - Isolation	Rise Time (Typ)	Fall Time (Typ)	Current - Output / Channel	Current Transfer Ratio (Min)	Operating Temperature (Max)	Operating Temperature (Min)	Vce Saturation (Max)	Current Transfer Ratio (Max)	Number of Channels	Mounting Type	Output Type	Voltage - Output (Max)	Input Type
Toshiba Semiconductor and Storage TLP293(GRH-TPL,E	3 µs	3 µs	4.55 mm	4-SO 4-SOIC	0.179 in	1.25 V	50 mA	3750 VDC	2 µs	3 µs	50 mA	150 %	125 °C	-55 °C	300 mV	300 %	1	Surface Mount	Transistor	80 V	DC
Toshiba Semiconductor and Storage TLP293(BLL-TPL,E	3 µs	3 µs	4.55 mm	4-SO 4-SOIC	0.179 in	1.25 V	50 mA	3750 VDC	2 µs	3 µs	50 mA	200 %	125 °C	-55 °C	300 mV	400 %	1	Surface Mount	Transistor	80 V	DC
Toshiba Semiconductor and Storage TLP293(GB-TPL,E	3 µs	3 µs	4.55 mm	4-SO 4-SOIC	0.179 in	1.25 V	50 mA	3750 VDC	2 µs	3 µs	50 mA	100 %	125 °C	-55 °C	300 mV	600 %	1	Surface Mount	Transistor	80 V	DC
Toshiba Semiconductor and Storage TLP293(Y-TPL,E	3 µs	3 µs	4.55 mm	4-SO 4-SOIC	0.179 in	1.25 V	50 mA	3750 VDC	2 µs	3 µs	50 mA	50 %	125 °C	-55 °C	300 mV	150 %	1	Surface Mount	Transistor	80 V	DC
Toshiba Semiconductor and Storage TLP293(TPL,E	3 µs	3 µs	4.55 mm	4-SO 4-SOIC	0.179 in	1.25 V	50 mA	3750 VDC	2 µs	3 µs	50 mA	50 %	125 °C	-55 °C	300 mV	600 %	1	Surface Mount	Transistor	80 V	DC
Toshiba Semiconductor and Storage TLP293(GRL-TPL,E	3 µs	3 µs	4.55 mm	4-SO 4-SOIC	0.179 in	1.25 V	50 mA	3750 VDC	2 µs	3 µs	50 mA	100 %	125 °C	-55 °C	300 mV	200 %	1	Surface Mount	Transistor	80 V	DC
Toshiba Semiconductor and Storage TLP293(BL-TPL,E	3 µs	3 µs	4.55 mm	4-SO 4-SOIC	0.179 in	1.25 V	50 mA	3750 VDC	2 µs	3 µs	50 mA	200 %	125 °C	-55 °C	300 mV	600 %	1	Surface Mount	Transistor	80 V	DC
Toshiba Semiconductor and Storage TLP293(GR-TPL,E	3 µs	3 µs	4.55 mm	4-SO 4-SOIC	0.179 in	1.25 V	50 mA	3750 VDC	2 µs	3 µs	50 mA	100 %	125 °C	-55 °C	300 mV	300 %	1	Surface Mount	Transistor	80 V	DC
Toshiba Semiconductor and Storage TLP293(YH-TPL,E	3 µs	3 µs	4.55 mm	4-SO 4-SOIC	0.179 in	1.25 V	50 mA	3750 VDC	2 µs	3 µs	50 mA	75 %	125 °C	-55 °C	300 mV	150 %	1	Surface Mount	Transistor	80 V	DC

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TLP293(BLL-TPL,E | Datasheet

Low-IF couplers-basic properties and application design

Safety standards for photocouplers

Photocouplers and Photorelays

Glossary of Photocoupler and Photorelay Terms

Selection Guide Isolators and Solid State Relays 2025Rev1.0

Application note for phototransistor coupler

TLP293 Data sheet/Japanese