Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO4
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO4
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO4
| Part | Turn On Time (Typ) | Turn Off Time (Typ) | Package Width | Package Name | Package Length | Voltage - Forward (Vf) (Typ) | Current - DC Forward (If) (Max) | Voltage - Isolation | Rise Time (Typ) | Fall Time (Typ) | Current - Output / Channel | Current Transfer Ratio (Min) | Operating Temperature (Max) | Operating Temperature (Min) | Vce Saturation (Max) | Current Transfer Ratio (Max) | Number of Channels | Mounting Type | Output Type | Voltage - Output (Max) | Input Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4.55 mm | 4-SO 4-SOIC | 0.179 in | 1.25 V | 50 mA | 3750 VDC | 2 µs | 3 µs | 50 mA | 150 % | 125 °C | -55 °C | 300 mV | 300 % | 1 | Surface Mount | Transistor | 80 V | DC |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4.55 mm | 4-SO 4-SOIC | 0.179 in | 1.25 V | 50 mA | 3750 VDC | 2 µs | 3 µs | 50 mA | 200 % | 125 °C | -55 °C | 300 mV | 400 % | 1 | Surface Mount | Transistor | 80 V | DC |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4.55 mm | 4-SO 4-SOIC | 0.179 in | 1.25 V | 50 mA | 3750 VDC | 2 µs | 3 µs | 50 mA | 100 % | 125 °C | -55 °C | 300 mV | 600 % | 1 | Surface Mount | Transistor | 80 V | DC |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4.55 mm | 4-SO 4-SOIC | 0.179 in | 1.25 V | 50 mA | 3750 VDC | 2 µs | 3 µs | 50 mA | 50 % | 125 °C | -55 °C | 300 mV | 150 % | 1 | Surface Mount | Transistor | 80 V | DC |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4.55 mm | 4-SO 4-SOIC | 0.179 in | 1.25 V | 50 mA | 3750 VDC | 2 µs | 3 µs | 50 mA | 50 % | 125 °C | -55 °C | 300 mV | 600 % | 1 | Surface Mount | Transistor | 80 V | DC |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4.55 mm | 4-SO 4-SOIC | 0.179 in | 1.25 V | 50 mA | 3750 VDC | 2 µs | 3 µs | 50 mA | 100 % | 125 °C | -55 °C | 300 mV | 200 % | 1 | Surface Mount | Transistor | 80 V | DC |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4.55 mm | 4-SO 4-SOIC | 0.179 in | 1.25 V | 50 mA | 3750 VDC | 2 µs | 3 µs | 50 mA | 200 % | 125 °C | -55 °C | 300 mV | 600 % | 1 | Surface Mount | Transistor | 80 V | DC |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4.55 mm | 4-SO 4-SOIC | 0.179 in | 1.25 V | 50 mA | 3750 VDC | 2 µs | 3 µs | 50 mA | 100 % | 125 °C | -55 °C | 300 mV | 300 % | 1 | Surface Mount | Transistor | 80 V | DC |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4.55 mm | 4-SO 4-SOIC | 0.179 in | 1.25 V | 50 mA | 3750 VDC | 2 µs | 3 µs | 50 mA | 75 % | 125 °C | -55 °C | 300 mV | 150 % | 1 | Surface Mount | Transistor | 80 V | DC |