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ZXMC3A17DN8TA - Package Image for SO-8

ZXMC3A17DN8TA

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 5.4A I(D), 30V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA, SOIC-8

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ZXMC3A17DN8TA - Package Image for SO-8

ZXMC3A17DN8TA

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 5.4A I(D), 30V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA, SOIC-8

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Technical Specifications

Parameters and characteristics for this part

SpecificationZXMC3A17DN8TA
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C3.4 A, 4.1 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs12.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]1.25 W
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.95
10$ 0.78
100$ 0.61
Digi-Reel® 1$ 0.95
10$ 0.78
100$ 0.61
Tape & Reel (TR) 500$ 0.51
1000$ 0.42
2500$ 0.39
5000$ 0.37
12500$ 0.37

Description

General part information

ZXMC3A17DN8 Series

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.