
ZXMC3AMCTA
ActivePOWER FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 0.12OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, DFN3020B-8, 8 PIN
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ZXMC3AMCTA
ActivePOWER FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 0.12OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, DFN3020B-8, 8 PIN
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Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMC3AMCTA |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9 A, 2.1 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 3.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-WDFN Exposed Pad |
| Power - Max [Max] | 1.7 W |
| Rds On (Max) @ Id, Vgs | 120 mOhm |
| Supplier Device Package | DFN3020B-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3 V |
ZXMC3A17DN8 Series
30V Complementary Pair Enhancement Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | Configuration | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | FET Feature | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Technology | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 30 V | N and P-Channel | 12.2 nC | 8-SO | -55 °C | 150 °C | 3.4 A 4.1 A | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | 1 V | 50 mOhm | 600 pF | Surface Mount | MOSFET (Metal Oxide) | 1.25 W | ||
Diodes Inc | 30 V | N and P-Channel | 17.5 nC | 8-SO | -55 °C | 150 °C | 4.1 A 4.9 A | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | 1 V | 35 mOhm | Surface Mount | MOSFET (Metal Oxide) | 1.25 W | 796 pF | ||
Diodes Inc | 30 V | N and P-Channel | DFN3020B-8 | -55 °C | 150 °C | 2.1 A 2.9 A | Logic Level Gate | 8-WDFN Exposed Pad | 3 V | 120 mOhm | Surface Mount | MOSFET (Metal Oxide) | 1.7 W | 190 pF | 3.9 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.97 | |
| 10 | $ 0.80 | |||
| 100 | $ 0.62 | |||
| 500 | $ 0.52 | |||
| 1000 | $ 0.43 | |||
| Digi-Reel® | 1 | $ 0.97 | ||
| 10 | $ 0.80 | |||
| 100 | $ 0.62 | |||
| 500 | $ 0.52 | |||
| 1000 | $ 0.43 | |||
| Tape & Reel (TR) | 3000 | $ 0.38 | ||
Description
General part information
ZXMC3A17DN8 Series
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Documents
Technical documentation and resources