DMP3011SFVWQ-7

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Diodes Inc

TRANSISTOR MOSFET P-CHANNEL 30V 50A 8-PIN POWERDI3333 T/R

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Diodes Inc

TRANSISTOR MOSFET P-CHANNEL 30V 50A 8-PIN POWERDI3333 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMP3011SFVWQ-7

Current - Continuous Drain (Id) @ 25°C	50 A
Current - Continuous Drain (Id) @ 25°C	19.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	2380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	980 mW
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

30V P-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMP3011SFVWQ-7	46 nC	-55 °C	150 °C	8-PowerVDFN	3 V	Surface Mount	MOSFET (Metal Oxide)	980 mW	2380 pF	P-Channel	25 V	4.5 V 10 V	POWERDI3333-8	30 V	10 mOhm	50 A	19.8 A
Diodes Inc DMP3011SFVWQ-13	46 nC	-55 °C	150 °C	8-PowerVDFN	3 V	Surface Mount Wettable Flank	MOSFET (Metal Oxide)	980 mW	2380 pF	P-Channel	25 V	4.5 V 10 V	PowerDI3333-8 (SWP) Type UX	30 V	10 mOhm	50 A	19.8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP