DMP3011SFVWQ Series

30V P-Channel Enhancement Mode MOSFET

Catalog

30V P-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMP3011SFVWQ-7	46 nC	-55 °C	150 °C	8-PowerVDFN	3 V	Surface Mount	MOSFET (Metal Oxide)	980 mW	2380 pF	P-Channel	25 V	4.5 V 10 V	POWERDI3333-8	30 V	10 mOhm	50 A	19.8 A
Diodes Inc DMP3011SFVWQ-13	46 nC	-55 °C	150 °C	8-PowerVDFN	3 V	Surface Mount Wettable Flank	MOSFET (Metal Oxide)	980 mW	2380 pF	P-Channel	25 V	4.5 V 10 V	PowerDI3333-8 (SWP) Type UX	30 V	10 mOhm	50 A	19.8 A

Catalog

30V P-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – Ensures On-State Losses Are Minimized

• Small Form Factor Thermally Efficient Package Enables HigherDensity End Products

• Occupies Just 33% of The Board Area Occupied by SO-8Enabling Smaller End Product

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• The DMP3011SFVWQ is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP