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BSC0702LSATMA1 - INFINEON BSC0702LSATMA1

BSC0702LSATMA1

Infineon Technologies

OPTIMOS™ PD N-CHANNEL POWER MOSFET 60 V ; SUPERSO8 PACKAGE; 2.7 MOHM;

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BSC0702LSATMA1 - INFINEON BSC0702LSATMA1

BSC0702LSATMA1

Infineon Technologies

OPTIMOS™ PD N-CHANNEL POWER MOSFET 60 V ; SUPERSO8 PACKAGE; 2.7 MOHM;

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC0702LSATMA1
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs2.3 mOhm
Supplier Device PackagePG-TDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 5000$ 0.60
DigikeyCut Tape (CT) 1$ 2.48
10$ 1.60
100$ 1.10
500$ 0.88
1000$ 0.81
2000$ 0.75
Digi-Reel® 1$ 2.48
10$ 1.60
100$ 1.10
500$ 0.88
1000$ 0.81
2000$ 0.75
Tape & Reel (TR) 5000$ 0.73
NewarkEach (Supplied on Cut Tape) 1$ 2.59
10$ 1.82
25$ 1.69
50$ 1.56
100$ 1.43
250$ 1.28
500$ 1.21
1000$ 1.08

Description

General part information

BSC0702 Series

OptiMOS™ PD power MOSFETis Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products with best-in-class performance for differentiated designs in compact, lightweight packages. Click here to viewfull portfolio.