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OPTIMOS™ PD N-CHANNEL POWER MOSFET 60 V ; SUPERSO8 PACKAGE; 2.7 MOHM;
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Package / Case | Mounting Type | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Technology | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 60 V | 30 nC | 100 A | -55 °C | 150 °C | 4.5 V 10 V | PG-TDSON-8 | 4400 pF | 83 W | 8-PowerTDFN | Surface Mount | N-Channel | 20 V | 2.3 mOhm | MOSFET (Metal Oxide) | 2.3 V |