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BSC050N10NS5ATMA1 - 8-Power TDFN

BSC050N10NS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 5 MOHM;

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BSC050N10NS5ATMA1 - 8-Power TDFN

BSC050N10NS5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 5 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC050N10NS5ATMA1
Current - Continuous Drain (Id) @ 25°C16 A, 100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)136 W, 3 W
Rds On (Max) @ Id, Vgs [Max]5 mOhm
Supplier Device PackagePG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.25
10$ 2.12
100$ 1.47
500$ 1.20
1000$ 1.11
2000$ 1.06
Digi-Reel® 1$ 3.25
10$ 2.12
100$ 1.47
500$ 1.20
1000$ 1.11
2000$ 1.06
Tape & Reel (TR) 5000$ 1.06
NewarkEach (Supplied on Full Reel) 5000$ 1.04

Description

General part information

BSC050 Series

OptiMOS™ 5 100V power MOSFETs are especially designed for synchronous rectification intelecomandserverpower supplies. In addition, these devices can also be utilized in other industrial applications such assolar,low voltage drivesandadapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest RDS(on).

Documents

Technical documentation and resources

No documents available