
BSC050N10NS5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 5 MOHM;
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BSC050N10NS5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 5 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSC050N10NS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A, 100 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 136 W, 3 W |
| Rds On (Max) @ Id, Vgs [Max] | 5 mOhm |
| Supplier Device Package | PG-TDSON-8-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSC050 Series
OptiMOS™ 5 100V power MOSFETs are especially designed for synchronous rectification intelecomandserverpower supplies. In addition, these devices can also be utilized in other industrial applications such assolar,low voltage drivesandadapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest RDS(on).
Documents
Technical documentation and resources
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