BSC050 Series

Catalog

POWER MOSFET, N CHANNEL, 40 V, 85 A, 0.0042 OHM, PG-TSDSON, SURFACE MOUNT

Part	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies BSC050N04LSGATMA1	PG-TDSON-8-5	8-PowerTDFN	40 V	4.5 V 10 V	3700 pF	5 mOhm	MOSFET (Metal Oxide)	2 V	2.5 W 57 W	18 A 85 A	N-Channel	20 V	-55 °C	150 °C	Surface Mount
Infineon Technologies BSC050N03LSGATMA1	PG-TDSON-8-5	8-PowerTDFN	30 V	4.5 V 10 V	2800 pF		MOSFET (Metal Oxide)		2.5 W 50 W	18 A 80 A	N-Channel	20 V	-55 °C	150 °C	Surface Mount	5 mOhm	2.2 V	35 nC
Infineon Technologies BSC050N10NS5ATMA1	PG-TDSON-8-7	8-PowerTDFN	100 V	6 V 10 V		5 mOhm	MOSFET (Metal Oxide)	3.8 V	3 W 136 W	16 A 100 A	N-Channel	20 V	-55 °C	175 ░C	Surface Mount				4300 pF	61 nC