IPP80R450P7XKSA1

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Infineon Technologies

MOSFET, N-CH, 800V, 11A, TO-220

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Infineon Technologies

MOSFET, N-CH, 800V, 11A, TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	IPP80R450P7XKSA1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	73 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	FET Type	Technology	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Infineon Technologies IPP80R450P7XKSA1	N-Channel	MOSFET (Metal Oxide)	TO-220-3	PG-TO220-3	-55 °C	150 °C	24 nC	3.5 V	11 A	Through Hole	770 pF	73 W	800 V	20 V	10 V	450 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 11A (Tc) 73W (Tc) Through Hole PG-TO220-3

Technical documentation and resources