MOSFET, N-CH, 800V, 11A, TO-220
| Part | FET Type | Technology | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | MOSFET (Metal Oxide) | TO-220-3 | PG-TO220-3 | -55 °C | 150 °C | 24 nC | 3.5 V | 11 A | Through Hole | 770 pF | 73 W | 800 V | 20 V | 10 V | 450 mOhm |