IDH20G65C5XKSA2

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 20 A, 29 NC, TO-220

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IDH20G65C5XKSA2

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 20 A, 29 NC, TO-220

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDH20G65C5XKSA2

Capacitance @ Vr, F	590 pF
Current - Reverse Leakage @ Vr	210 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2-1
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

IDH20G65 Series

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Supplier Device Package	Speed	Capacitance @ Vr, F	Package / Case	Reverse Recovery Time (trr)
Infineon Technologies IDH20G65C5XKSA2	Through Hole	650 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	1.7 V	210 µA	PG-TO220-2-1	No Recovery Time	590 pF	TO-220-2	0 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 8.46
		50	$ 4.55
		100	$ 4.18
Digikey	Tube	1	$ 7.41
		50	$ 5.91
		100	$ 5.29
		500	$ 4.67
		1000	$ 4.20
		2000	$ 3.94
Newark	Each	1	$ 6.59
		10	$ 5.81
		25	$ 3.61
		50	$ 3.57
		100	$ 3.54
		250	$ 3.49
		500	$ 3.45

Description

General part information

IDH20G65 Series

The CoolSiC™ Schottky diode 650 V, 20 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).

Documents

Technical documentation and resources