Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 20 A, 29 NC, TO-220
| Part | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Supplier Device Package | Speed | Capacitance @ Vr, F | Package / Case | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Through Hole | 650 V | 175 ░C | -55 C | SiC (Silicon Carbide) Schottky | 1.7 V | 210 µA | PG-TO220-2-1 | No Recovery Time | 590 pF | TO-220-2 | 0 ns |